Deterioration Of Short Channel Effects In Dual Halo Based Triple Material Surrounding Gate (Dh-Tmsg) Mosfet
نویسندگان
چکیده
منابع مشابه
An Accurate 2D Analytical Model for Transconductance to Drain Current ratio (gm/Id) for a Dual Halo Dual Dielectric Triple Material Cylindrical Gate All Around MOSFETs
A dual-halo dual-dielectric triple-material cylindrical-gate-all-around/surrounding gate (DH-DD-TM-CGAA/SG) MOSFET has been proposed and an analytical model for the transconductance-to-drain current ratio (TDCR) has been developed. It is verified that incorporation of dual-halo with dual-dielectric and triple-material results in enhancing the device performance in terms of improved TDCR. The ef...
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ژورنال
عنوان ژورنال: International Journal of Information Sciences and Techniques
سال: 2014
ISSN: 2319-409X,2249-1139
DOI: 10.5121/ijist.2014.4304